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1

Hot-carrier effects on leakage currents in MOSFETs—Modelling and experiment

J. Oualid, S. Burgniard, E. Ciantar, R. Jérisian

Journal:

Microelectronics Reliability

Year:

1993

Language:

english

File:

PDF, 1.06 MB

english, 1993

2

On the optimum thickness to test dielectric reliability, in an integrated technology of power devices

Slimane Oussalah, Fabien Nebel, Robert Jérisian

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 134 KB

english, 2000

3

3-D analysis of the breakdown localised defects of ACSTM through a triac study

S. Forster, T. Lequeu, R. Jérisian, A. Hoffmann

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 589 KB

english, 2000

4

Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects

S. Forster, T. Lequeu, R. Jérisian

Journal:

Microelectronics Reliability

Year:

2001

File:

PDF, 492 KB

2001

5

LIFETIME EXTRAPOLATION OF PZT CAPACITORS

BOUYSSOU, EMILIEN, GUEGAN, GUILLAUME, JERISIAN, ROBERT

Journal:

Integrated Ferroelectrics

Year:

2005

Language:

english

File:

PDF, 526 KB

english, 2005

6

Caractéristiques Courant-Tension Des Structures Ti/TiO2/Électrolyte Et Ti/TiO2/Métal: Effet Schottky Et Claquage

R. Jérisian, J.C. Marchenoir, J.P. Loup

Journal:

Thin Solid Films

Year:

1983

File:

PDF, 511 KB

1983

7

Influence of oxygen on the behaviour of diodes fabricated from sputtered TiO2 films on gold

R. Jérisian, J.P. Loup, J. Gautron

Journal:

Thin Solid Films

Year:

1984

Language:

english

File:

PDF, 346 KB

english, 1984

8

Influence of the turn-on mechanism on TRIACs’ reliability: di/dt thermal fatigue study in Q1 compared to Q2

S. Moreau, S. Forster, T. Lequeu, R. Jérisian

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 1.30 MB

2002

9

Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3

S. Forster, T. Lequeu, R. Jérisian

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 869 KB

english, 2003

10

Dielectric testing for integrated power devices

S. Oussalah, R. Jerisian

Journal:

Microelectronics Reliability

Year:

1997

Language:

english

File:

PDF, 229 KB

english, 1997

11

Trapping of aluminium by dislocation loops in Si

Ch Ortiz, D Mathiot, D Alquier, Ch Dubois, R Jérisian

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2001

Language:

english

File:

PDF, 99 KB

english, 2001

12

Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects

Ch. Ortiz, J.J. Grob, D. Mathiot, A. Claverie, Ch. Dubois, R. Jérisian

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1999

Language:

english

File:

PDF, 161 KB

english, 1999

13

Influence of FN electron injections in dry and dry/wet/dry gate oxides: Relation with failure

Eric Ciantar, Philippe Boivin, Michel Burle, Christophe Niel, J. Michel Moragues, Bruno Sagnes, Robert Jerisian, Jean Oualid

Journal:

Journal of Non-Crystalline Solids

Year:

1995

Language:

english

File:

PDF, 345 KB

english, 1995

14

Influence of WSi2 polysilicide gate process on integrity and reliability of gate and tunnel oxides

J.M. Moragues, B. Sagnes, R. Jerisian, J. Oualid, E. Ciantar, J.L. Liotard, P. Merenda

Journal:

Journal of Non-Crystalline Solids

Year:

1995

Language:

english

File:

PDF, 282 KB

english, 1995

15

Dopant - Extended Defects Interactions: The Case of Aluminum

Ortiz, Ch., Mathiot, D., Dubois, Ch., Alquier, D., Jérisian, R.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 146 KB

english, 2000

16

Influence de la température et de la vitesse de sollicitation sur les propriétés mécaniques d'alliages ternaires

Moreau, Stéphane, Jérisian, Robert, Lequeu, Thierry, Ranganathan, Narayanaswami, Leroy, René, Méo, Stéphane

Journal:

Mécanique & Industries

Year:

2008

File:

PDF, 1.09 MB

2008

17

Coupling between the front and back interfaces in the gate-controlled P+PN+ diode on silicon-on-insulator

J.-M. Moragues, J. Bouzidi, E. Ciantar, R. Jerisian, J. Oualid, S. Cristoloveanu

Journal:

Microelectronics Journal

Year:

1994

Language:

english

File:

PDF, 841 KB

english, 1994

18

Experiments and modelling to determine trapped holes and slow states in Fowler-Nordheim stressed MOS capacitors

J.-M. Moragues, B. Sagnes, K. Yckache, R. Jérisian, J. Oualid, D. Vuillaume

Journal:

Microelectronic Engineering

Year:

1995

Language:

english

File:

PDF, 351 KB

english, 1995

19

Wafer level reliability and leakage current modeling of PZT capacitors

E. Bouyssou, R. Jérisian, N. Cézac, P. Leduc, G. Guégan, C. Anceau

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 206 KB

english, 2005

20

Sol–gel MgO thin films for insulation on SiC

Céline Bondoux, Philippe Prené, Philippe Belleville, François Guillet, Sébastien Lambert, Benoît Minot, Robert Jérisian

Journal:

Materials Science in Semiconductor Processing

Year:

2004

Language:

english

File:

PDF, 253 KB

english, 2004

21

MgO insulating films prepared by sol–gel route for SiC substrate

Céline Bondoux, Philippe Prené, Philippe Belleville, François Guillet, Sébastien Lambert, Benoît Minot, Robert Jérisian

Journal:

Journal of the European Ceramic Society

Year:

2005

Language:

english

File:

PDF, 196 KB

english, 2005

22

Boron interaction with extended defects induced by He–H co-implantation in Si

G. Gaudin, F. Cayrel, C. Bongiorno, R. Jérisian, C. Dubois, V. Raineri, D. Alquier

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 174 KB

english, 2005

23

A comparative study of different contact resistance test structures dedicated to the power process technology

Slimane Oussalah, Boualem Djezzar, Robert Jerisian

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 354 KB

english, 2005

24

Boron diffusion in presence of defects induced by helium implantation

F. Cayrel, D. Alquier, C. Dubois, R. Jérisian

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 258 KB

english, 2005

25

Fabrication of deep single trenches from N-type macroporous silicon

G. Gautier, L. Ventura, T. Pordié, R. Rogel, R. Jérisian

Journal:

Thin Solid Films

Year:

2005

Language:

english

File:

PDF, 302 KB

english, 2005

26

Two-dimensional modelling and characterization of gate-to-drain overlap contribution on the leakage current of a MOSFET, used as a GCD

E. Ciantar, S. Burgniard, R. Jérisian, J. Oualid

Journal:

Quality and Reliability Engineering International

Year:

1993

Language:

english

File:

PDF, 437 KB

english, 1993

27

A simple model for boron trapping by He implantation extended defects in Si: the role of boron diffusivity

F. Cayrel, D. Alquier, D. Mathiot, L. Ventura, L. Vincent, G. Gaudin, R. Jérisian

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2004

Language:

english

File:

PDF, 404 KB

english, 2004

28

Lateral gettering of iron and platinum by cavities induced by helium implantation in silicon

F Roqueta, L Ventura, J.J Grob, R Jérisian

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2001

Language:

english

File:

PDF, 100 KB

english, 2001

29

Boron gettering on cavities induced by helium implantation in Si

F. Roqueta, D. Alquier, L. Ventura, Ch. Dubois, R. Jérisian

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2001

Language:

english

File:

PDF, 218 KB

english, 2001

30

Stability of cavities formed by He+ implantation in silicon

F. Roqueta, A. Grob, J.J. Grob, R. Jérisian, J.P. Stoquert, L. Ventura

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1999

Language:

english

File:

PDF, 539 KB

english, 1999

31

Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes

Seghir, K., Cristoloveanu, S., Jerisian, R., Oualid, J., Auberton-Herve, A.-J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 828 KB

english, 1993

32

[IEEE 2005 IEEE International Integrated Reliability Workshop - S. Lake Tahoe, CA, USA (17-20 Oct. 2005)] 2005 IEEE International Integrated Reliability Workshop - Testing Methodology for Lifetime Extrapolation of PZT Capacitors

Bouyssou, E., Bruyere, S., Guegan, G., Anceau, C., Jerisian, R.

Year:

2005

Language:

english

File:

PDF, 2.17 MB

english, 2005

33

[IEEE 1991 International Conference on Microelectronic Test Structures - Kyoto, Japan (18-20 March 1991)] Proceedings of the 1991 International Conference on Microelectronic Test Structures - Extraction of the interfacial generation velocity in MOSFETs

Dugas, J., Jerisian, R., Oualid, J., Labrunye, D., Mirabel, J.M.

Year:

1991

Language:

english

File:

PDF, 302 KB

english, 1991

34

[IEEE EuroSimE 2005. 6th International Conference on Thermal, Mechanial and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. - Berlin, Germany (April 18-20, 2005)] EuroSimE 2005. Proceedings of the 6th International Conference on Thermal, Mechanial and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. - Comparison of lifetime predictions with 3-D finite element model of power electronics devices

Moreau, S., Leroy, R., Lequeu, T., Jerisian, R.

Year:

2005

Language:

english

File:

PDF, 940 KB

english, 2005

35

[IEEE 1999 IEEE Hong Kong Electron Devices Meeting - Shatin, Hong Kong (26 June 1999)] Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) - Carrier lifetime recombination measurement by conductivity modulation for power p-i-n diode

Oussalah, S., Jerisian, R.

Year:

1999

Language:

english

File:

PDF, 281 KB

english, 1999

36

Effects of high field electron injection into the gate oxide of P-channel metal–oxide–semiconductor transistors

Moragues, J. M., Oualid, J., Jerisian, R., Ciantar, E.

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 1.36 MB

english, 1993

37

[IEEE 1991 IEEE International SOI Conference - Vail Valley, CO, USA (1-3 Oct. 1991)] 1991 IEEE International SOI Conference Proceedings - Correlation of the leakage current and charge pumping in SIMOX gated diodes

Seghir, H., Cristoloveanu, S., Jerisian, R., Oualid, J., Auberton, A.

Year:

1991

Language:

english

File:

PDF, 141 KB

english, 1991

38

Physical Properties of Polysilicon Diodes Derived from a Smart Power Technology

Claverie, I., Oualid, J., Mille, J., Bonnaud, O., Jérisian, Robert

Journal:

Solid State Phenomena

Year:

1996

File:

PDF, 418 KB

1996

39

Development of Sol-Gel MgO Thin Films for SiC Insulation Applications

Bondoux, C., Prené, P., Belleville, P., Guillet, F., Jérisian, Robert

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 291 KB

english, 2004

40

Defects Induced by Helium Implantation: Impact on Boron Diffusivity

Cayrel, F., Alquier, D., Dubois, C., Jerisian, R.

Journal:

MRS Proceedings

Year:

2005

Language:

english

File:

PDF, 757 KB

english, 2005

41

Doping Effect of Helium Induced Nanocavities in Silicon

Cayrel, Frédéric, Ventura, Laurent, Alquier, Daniel, Roqueta, Fabrice, Jérisian, Robert

Journal:

Solid State Phenomena

Year:

2004

Language:

english

File:

PDF, 222 KB

english, 2004

42

Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices

Cayrel, Frédéric, Alquier, Daniel, Ventura, Laurent, Vincent, Leo, Roqueta, F., Dubois, Christiane, Jérisian, Robert

Journal:

Solid State Phenomena

Year:

2004

Language:

english

File:

PDF, 680 KB

english, 2004

43

Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus

Cayrel, Frédéric, Alquier, Daniel, Roqueta, F., Ventura, Laurent, Dubois, Christiane, Jérisian, Robert, Mathiot, D.

Journal:

Solid State Phenomena

Year:

2002

File:

PDF, 549 KB

2002

44

Impact of Hydrogen Implantation on Helium Implantation Induced Defects

Gaudin, G., Cayrel, Frédéric, Bongiorno, Corrado, Jérisian, Robert, Raineri, Vito, Alquier, Daniel

Journal:

Solid State Phenomena

Year:

2005

Language:

english

File:

PDF, 1.18 MB

english, 2005

45

Gettering on Cavities Induced by Helium Implantation in Si: The Case of Boron

Alquier, Daniel, Roqueta, Fabrice, Ventura, Laurent, Cayrel, Frederic, Dubois, Christiane, Jérisian, Robert

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 335 KB

english, 2002

46

Optimization of the fabrication of sealed capacitive transducers using surface micromachining

Belgacem, B, Alquier, D, Muralt, P, Baborowski, J, Lucas, S, Jerisian, R

Journal:

Journal of Micromechanics and Microengineering

Year:

2004

Language:

english

File:

PDF, 334 KB

english, 2004

47

Leakage current conduction in IrO 2 /PZT/Pt structures

Bouyssou, E, Leduc, P, Guégan, G, Jérisian, R

Journal:

Journal of Physics Conference Series

Year:

2005

Language:

english

File:

PDF, 100 KB

english, 2005

48

Influence of geometrical and electrical parameters of masking layers on the electrochemical etching of silicon for single trench formation

Gautier, G, Ventura, L, Jérisian, R

Journal:

Journal of Physics Conference Series

Year:

2005

Language:

english

File:

PDF, 324 KB

english, 2005

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